SI4884DY vishay siliconix document number: 70946 s-03950?rev. c, 26-may-03 www.vishay.com 2-1 n-channel reduced q g , fast switching mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.0105 @ v gs = 10 v 12 30 0.0165 @ v gs = 4.5 v 10 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet dd g s d d s s ordering information: SI4884DY SI4884DY-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a, b t a = 25 c i d 12 continuous drain current (t j = 150 c) a, b t a = 70 c i d 10 a pulsed drain current i dm 50 a continuous source current (diode conduction) a, b i s 2.3 maximum power dissipation a, b t a = 25 c p d 2.95 w maximum power dissipation a, b t a = 70 c p d 1.9 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient (mosfet) a t 10 sec r 35 42 maximum junction-to-ambient (mosfet) a steady state r thja 68 80 c/w maximum junction-to-foot steady state r thjf 18 23 c/w notes a. surface mounted on fr4 board. b. t 10 sec.
SI4884DY vishay siliconix www.vishay.com 2-2 document number: 70946 s-03950?rev. c, 26-may-03 mosfet specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 12 a 0.0086 0.0105 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 4.5 v, i d = 10 a 0.0135 0.0165 forward transconductance a g fs v ds = 15 v, i d = 12 a 26 s diode forward voltage a v sd i s = 2.3 a, v gs = 0 v 0.74 1.1 v dynamic b total gate charge q g 15.3 20 gate-source charge q gs v ds = 15 v, v gs = 5.0 v, i d = 12 a 5.8 nc gate-drain charge q gd 4.8 gate resistance r g 0.5 2.2 turn-on delay time t d(on) 13 20 rise time t r v dd = 15 v, r l = 15 7 12 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 55 82 ns fall time t f 16 30 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/ s 40 70 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 10 20 30 40 50 0246810 v gs = 10 thru 4 v 25 c t c = 125 c 0-2 v -55 c 3 v output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d
SI4884DY vishay siliconix document number: 70946 s-03950?rev. c, 26-may-03 www.vishay.com 2-3 typical characteristics (25 c unless noted) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 1020304050 0 2 4 6 8 10 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 c rss c oss c iss v ds = 15 v i d = 12 a v gs = 10 v i d = 12 a v gs = 10 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 4.5 v 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246810 1 10 50 i d = 12 a 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s
SI4884DY vishay siliconix www.vishay.com 2-4 document number: 70946 s-03950?rev. c, 26-may-03 typical characteristics (25 c unless noted) - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a threshold v oltage variance (v) v gs(th) t j - temperature ( c) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 0.01 0 1 50 60 20 30 10 30 0.1 single pulse power time (sec) 10 40 power (w) 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 68 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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